Infineon BSC010NE2LSATMA1 OptiMOS™ 5 Power MOSFET: Datasheet, Application, and Features
The Infineon BSC010NE2LSATMA1 is a state-of-the-art N-channel power MOSFET from Infineon's renowned OptiMOS™ 5 technology family. This device is engineered to deliver exceptional efficiency and performance in a compact package, making it an ideal solution for a wide range of modern power conversion applications. It represents a significant step forward in achieving higher power density and thermal management in demanding electronic systems.
Key Features
The standout characteristics of this MOSFET are rooted in its advanced semiconductor technology. It boasts an extremely low typical on-state resistance (R DS(on)) of just 1.0 mΩ, which is a critical factor in minimizing conduction losses. This low resistance directly translates to higher efficiency, as less power is wasted as heat during operation. Furthermore, the device offers an outstanding gate charge (Q G) performance. The low gate charge ensures swift switching transitions, which reduces switching losses—a paramount advantage in high-frequency SMPS designs.
Housed in a SuperSO8 (LFPAK) package, this MOSFET provides an excellent thermal footprint. The package is designed for enhanced power dissipation, allowing the component to operate reliably under high-stress conditions. Its small form factor is crucial for designers aiming to shrink the size of their end products without compromising on power handling capabilities.
Primary Applications
The combination of low R DS(on) and fast switching speed makes the BSC010NE2LSATMA1 exceptionally versatile. Its primary application is in synchronous rectification circuits within switch-mode power supplies (SMPS), particularly those for computing and server infrastructures. It is also perfectly suited for use in DC-DC converter topologies, including both buck and boost converters, found in telecom equipment, industrial motor drives, and battery management systems. Additionally, it can be used in high-frequency inverters and as a key component in low-voltage drive trains.
Datasheet Overview
The datasheet for the BSC010NE2LSATMA1 provides comprehensive information necessary for effective circuit design and integration. Key specifications include:
Drain-Source Voltage (V DS): 25 V
Continuous Drain Current (I D): 100 A at 25°C
R DS(on) (max): 1.2 mΩ at V GS = 10 V
Gate Threshold Voltage (V GS(th)): typically 2.1 V
Total Gate Charge (Q G (typ)): 68 nC
The document also contains detailed graphs on switching characteristics, safe operating area (SOA), and thermal impedance, which are vital for optimizing performance and ensuring system reliability.
In summary, the Infineon BSC010NE2LSATMA1 OptiMOS™ 5 Power MOSFET is a high-performance component defined by its ultra-low on-resistance and superior switching characteristics. It enables designers to build more efficient, compact, and powerful next-generation power electronics, from advanced computing hardware to robust industrial systems.
Keywords:
Power MOSFET
OptiMOS™ 5
Synchronous Rectification
Low RDS(on)
DC-DC Converter
