Infineon IPN50R3K0CEATMA1 CoolMOS™ Power Transistor: Datasheet, Specifications, and Application Notes

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of MOSFET technology. At the forefront of this innovation is Infineon's CoolMOS™ family, with the IPN50R3K0CEATMA1 standing as a prime example of a high-performance superjunction (SJ) MOSFET designed for demanding switching applications.

This article provides a detailed overview of this component, covering its key specifications from the datasheet and essential application considerations.

Datasheet Overview and Key Specifications

The IPN50R3K0CEATMA1 is a N-channel 650 V CoolMOS™ CE power transistor. The "CE" series represents the seventh generation of Infineon's superjunction technology, which is engineered to achieve an unprecedented low figure-of-merit (R DS(on) x Q G). This is the cornerstone of its performance, enabling both low conduction and low switching losses.

Key electrical specifications include:

Drain-Source Voltage (V DS): 650 V. This high voltage rating makes it suitable for off-line SMPS (Switched-Mode Power Supplies) and other applications operating from universal mains input (85 V AC to 305 V AC).

Continuous Drain Current (I D): 4.3 A at a case temperature (T C) of 100°C.

On-State Resistance (R DS(on)): A remarkably low 300 mΩ (max.) at a gate-source voltage of 10 V and a junction temperature (T J) of 25°C. This low resistance is critical for minimizing conduction losses.

Gate Threshold Voltage (V GS(th)): Typically 3.5 V, ensuring robust noise immunity and compatibility with a wide range of gate driver ICs.

Total Gate Charge (Q G): Typically 18 nC. A low gate charge is vital for achieving fast switching speeds and reducing driving losses, especially at high frequencies.

The component is offered in the industry-standard TO-220 FullPAK package. This through-hole package features a fully molded, electrically isolated outer surface, allowing for easy mounting to a heatsink without the need for an insulating washer, thereby improving thermal performance and simplifying the assembly process.

Application Notes and Circuit Design Considerations

The primary strength of the IPN50R3K0CEATMA1 lies in high-efficiency, high-frequency switched-mode power supplies (SMPS). Its characteristics make it an ideal choice for:

Power Factor Correction (PFC) stages (both boost and totem-pole configurations).

LLC resonant converters and phase-shifted full-bridge converters for server and telecom power supplies.

Solar inverters and industrial motor drives.

Lighting ballasts and high-intensity discharge (HID) lighting.

To fully leverage the capabilities of this MOSFET, designers must pay close attention to several critical areas:

1. Gate Driving: A proper gate driver with adequate sink/source current capability (e.g., 2A) is mandatory to swiftly charge and discharge the input capacitance (C iss). This minimizes switching transition times and losses. A low-inductance gate drive loop layout is non-negotiable for preventing oscillations and erratic switching behavior.

2. PCB Layout: The high dv/dt and di/dt capabilities of CoolMOS™ devices make a careful PCB layout paramount. The power loop (including the decoupling capacitor, transformer, and MOSFET) must be as small and tight as possible to minimize parasitic inductance, which can cause voltage spikes and electromagnetic interference (EMI).

3. Thermal Management: Despite its high efficiency, managing power dissipation is crucial. The TO-220 FullPAK package allows for efficient transfer of heat to an external heatsink. Ensuring a low thermal resistance from junction to ambient (R thJA) is key to maintaining a safe operating junction temperature (T J < 150°C) and long-term reliability.

4. Body Diode Usage: While the intrinsic body diode can conduct during dead-time, its reverse recovery characteristics, though improved over previous generations, are not as fast as a dedicated SiC Schottky diode. In hard-switching bridge topologies (like half-bridges), careful dead-time management or the use of an external anti-parallel diode may be considered for ultimate efficiency.

ICGOODFIND: The Infineon IPN50R3K0CEATMA1 CoolMOS™ CE transistor is a benchmark component for high-voltage, high-frequency power conversion. Its exceptional combination of low specific on-resistance and low gate charge empowers designers to push the boundaries of efficiency and power density in modern SMPS designs, from server PSUs to industrial systems. Successful implementation hinges on a robust gate drive circuit and an optimized, low-parasitic PCB layout.

Keywords: CoolMOS, Superjunction MOSFET, High-Efficiency SMPS, 650V Power Transistor, PFC Stage