Intel TE28F128J3D75: A Comprehensive Technical Overview of the 128-Megabit Flash Memory Chip

The Intel TE28F128J3D75 stands as a significant component in the lineage of non-volatile memory solutions, representing a robust 128-megabit (16-megabyte) flash memory chip engineered for high-performance applications. Fabricated on a mature yet reliable 0.18-micron process technology, this device encapsulates the architectural prowess of its era, offering a blend of density, speed, and flexibility that made it a preferred choice for embedded systems, telecommunications infrastructure, and industrial computing.

At its core, the chip is organized as 16 megabits by 8 bits or 8 megabits by 16 bits, providing design engineers with critical flexibility for interfacing with both 8-bit and 16-bit microprocessors or microcontrollers. This dual data width capability is managed through the BYTE pin, allowing seamless configuration to match the host system's bus width without external component changes.

A defining feature of this memory family is its Advanced Sector Architecture. The 128Mb density is partitioned into 128 uniform blocks, each sized at 128 kilobytes. This granular block structure is fundamental for modern data management, enabling efficient erase and programming operations while minimizing overhead. Each block can be erased independently, which is vital for storing application code, configuration parameters, and user data in distinct, protected sections. The architecture supports individual block locking, allowing software or hardware to write-protect critical boot code or sensitive data sectors to prevent accidental corruption.

Performance is a key strength. The TE28F128J3D75 delivers fast read access times as low as 75ns, ensuring that processors can execute code directly from the flash memory (XiP - Execute-in-Place) with minimal wait states, thereby enhancing overall system performance. For write operations, it employs a 12-volt VPP programming voltage to facilitate rapid byte/word programming, achieving a typical programming time of 6µs per byte. The erase process is equally optimized, with a block erase time of approximately 1 second.

The chip operates from a single 2.7V to 3.6V VCC supply for read, erase, and program operations, making it ideal for low-power and portable applications. Its command set is compatible with the JEDEC common flash interface (CFI), simplifying software driver development and ensuring interoperability across different system designs. Furthermore, it offers a sophisticated status register for polling the completion of write/erase cycles and detecting operational errors, streamlining the firmware control flow.

Durability and data retention are exceptional, with a rating of 100,000 program/erase cycles per block and data retention of up to 20 years. These specifications underscore its suitability for demanding environments where long-term reliability is paramount.

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In summary, the Intel TE28F128J3D75 is a highly integrated, versatile, and reliable flash memory solution. Its advanced architecture, flexible interface, high performance, and proven endurance solidify its legacy as a cornerstone component in countless embedded designs, from networking equipment to advanced industrial control systems.

Keywords:

1. Non-Volatile Memory

2. Block Erase Architecture

3. Execute-in-Place (XiP)

4. Program/Erase Endurance

5. CFI (Common Flash Interface)