Infineon IPN70R2K0P7SATMA1 700V CoolMOS™ Power Transistor: Datasheet and Application Notes

The Infineon IPN70R2K0P7SATMA1 represents a state-of-the-art 700V superjunction MOSFET belonging to Infineon’s renowned CoolMOS™ P7 series. This power transistor is engineered to deliver exceptional efficiency and robustness in high-voltage switching applications, making it a preferred choice for designers of switched-mode power supplies (SMPS), lighting solutions, industrial drives, and renewable energy systems.

A deep dive into its datasheet reveals key specifications that underscore its high-performance design. The transistor boasts a maximum drain-source voltage (V_DS) of 700V, providing ample headroom for universal mains applications and ensuring reliability against voltage spikes. Its standout feature is an ultra-low on-state resistance (R_DS(on)) of just 2.0 Ω maximum at 25°C, which is a critical factor in minimizing conduction losses. This low R_DS(on) directly translates to higher efficiency, reduced heat generation, and the potential for smaller heatsinks, contributing to more compact and cost-effective designs.

The P7 technology incorporated into this MOSFET is specifically optimized for low switching losses. It achieves an excellent figure-of-merit (FOM, R_DS(on) ✕ Q_g), balancing low gate charge (Q_g) with low on-resistance. This results in faster switching speeds, improved thermal performance, and enhanced overall system efficiency, particularly in high-frequency operations common in modern power electronics.

Application notes for the IPN70R2K0P7SATMA1 emphasize several critical design considerations:

Gate Driving: Implementing a proper gate driver circuit is paramount. A recommended gate-source voltage (V_GS) of +15V/-10V ensures fast and clean switching, preventing excessive shoot-through and minimizing switching losses.

PCB Layout: To leverage the high-speed switching capability, a layout with minimized parasitic inductance in the high-current loop is essential. This involves using short and wide traces, placing decoupling capacitors close to the drain and source pins, and employing a ground plane to reduce EMI and voltage overshoot.

Thermal Management: Despite its high efficiency, effective heat dissipation remains crucial for reliability. Designers must ensure a low thermal resistance path from the case (D²PAK-7 SMD package) to the ambient, often requiring an adequately sized PCB copper area or an external heatsink for high-power applications.

Protection Circuits: Incorporating safeguards like overcurrent protection (e.g., using sense resistors or desaturation detection), snubber networks to clamp voltage spikes, and V_GS clamping zener diodes is strongly advised to protect the MOSFET under abnormal conditions.

In conclusion, the IPN70R2K0P7SATMA1 is a benchmark component for high-efficiency, high-power-density designs, offering a superior blend of low losses, high voltage capability, and switching performance.

ICGOODFIND: The Infineon IPN70R2K0P7SATMA1 700V CoolMOS™ P7 transistor is a top-tier solution for high-efficiency power conversion, characterized by its ultra-low on-resistance, optimized switching performance, and robust 700V rating, making it ideal for demanding applications like server SMPS, EV charging stations, and solar inverters.

Keywords: CoolMOS™ P7, Ultra-Low R_DS(on), High-Voltage MOSFET, Power Efficiency, Switching Losses.