**HMC636ST89ETR: A High-Performance GaAs pHEMT MMIC Distributed Amplifier from 2 to 20 GHz**
The **HMC636ST89ETR** represents a pinnacle of high-frequency analog design, engineered to deliver exceptional performance across an ultra-broad bandwidth from **2 to 20 GHz**. This monolithic microwave integrated circuit (MMIC) distributed amplifier is a critical component for a wide array of advanced RF and microwave systems, including test and measurement equipment, electronic warfare (EW) systems, radar, and fiber optic communication infrastructure.
Fabricated on a **high-performance GaAs (Gallium Arsenide) substrate**, the amplifier leverages the superior electron mobility of **pseudomorphic High Electron Mobility Transistors (pHEMTs)**. This technology is the cornerstone of its capability, enabling higher gain, lower noise figure, and greater power efficiency across multi-octave bandwidths compared to traditional silicon-based alternatives. The distributed, or traveling-wave, amplifier architecture is key to its wideband operation. This design topology effectively synthesizes the gain stages by utilizing the input and output capacitances of the transistors along with transmission lines to create artificial input and output transmission lines. This results in a flat gain response and excellent return loss over the entire frequency range.
The performance specifications of the HMC636ST89ETR are impressive. It typically provides a **flat gain of 12 dB**, with minimal variation across its operational band. This ensures signal integrity is maintained for complex modulated waveforms. Furthermore, it boasts a high output power capability, with a **saturated output power (PSAT) of +25 dBm** and an output third-order intercept point (OIP3) of +33 dBm, making it an excellent driver amplifier for high-linearity applications. Its input and output return losses are better than 12 dB, simplifying the task of impedance matching in system design.
Housed in a compact, RoHS-compliant **4x4 mm surface-mount QFN package**, the HMC636ST89ETR is designed for automated assembly, reducing manufacturing costs and improving reliability. Its robust performance and integrated bias sequencing circuitry make it an ideal, drop-in solution for designers seeking to push the boundaries of wideband system performance without the complexity of discrete amplifier design.
**ICGOOODFIND**: The HMC636ST89ETR stands out as a premier solution for demanding wideband applications, offering an optimal blend of high gain, excellent linearity, and robust power output in a highly integrated, easy-to-use package.
**Keywords**: **Distributed Amplifier**, **GaAs pHEMT**, **Wideband Amplifier**, **High Linearity**, **MMIC**.
