Infineon IPB027N10N3G: 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, Infineon Technologies introduces the IPB027N10N3G, a 100V N-channel power MOSFET that exemplifies the advanced performance of the OptiMOS™ 5 technology platform. This device is engineered to set a new benchmark in high-efficiency power conversion across a wide range of applications.

At the heart of this MOSFET's superior performance is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 2.7 mΩ at 10 V, the IPB027N10N3G minimizes conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. Simultaneously, its optimized gate charge ensures swift switching transitions, which is critical for reducing switching losses, especially in high-frequency operation. This combination is paramount for achieving peak efficiency in demanding switch-mode power supplies (SMPS), motor drives, and synchronous rectification circuits.

The benefits of the OptiMOS 5 technology extend beyond raw electrical characteristics. The device is housed in an ultra-compact DSO-8 (TO-263) package, which offers an excellent power-to-footprint ratio. This compact form factor is essential for designers striving to shrink the size of their end products without compromising thermal performance or output power. Furthermore, the MOSFET boasts enhanced robustness and reliability, featuring a high avalanche ruggedness and an extended safe operating area (SOA), which ensures stable operation under stressful load conditions.

Primary application targets for the IPB027N10N3G include:

Server & Telecom SMPS: Where high efficiency is critical for reducing operational costs and cooling requirements.

Industrial Power Supplies: Demanding robustness and reliability in harsh environments.

Motor Control and Drives: Benefiting from low conduction losses for improved system efficiency.

Synchronous Rectification: A key component in modern DC-DC converters for reducing rectifier voltage drop.

Battery Management Systems (BMS): For protection circuits and inverters in electric vehicles and energy storage.

ICGOOODFIND: The Infineon IPB027N10N3G is a standout power MOSFET that delivers an optimal blend of ultra-low R DS(on), fast switching capability, and excellent thermal performance in a miniature package. It is a top-tier solution for engineers focused on maximizing efficiency and power density in next-generation power conversion systems.

Keywords: OptiMOS 5, High-Efficiency, Low RDS(on), Power MOSFET, Synchronous Rectification.