Infineon BSZ240N12NS3G 120V N-Channel MOSFET for High-Efficiency Power Conversion

Release date:2025-11-05 Number of clicks:131

Infineon BSZ240N12NS3G 120V N-Channel MOSFET for High-Efficiency Power Conversion

The demand for high-efficiency power conversion systems continues to grow across industries such as automotive, renewable energy, industrial motor drives, and consumer electronics. Central to achieving this efficiency is the performance of the power switching devices used. The Infineon BSZ240N12NS3G, a 120V N-Channel MOSFET, stands out as a critical component engineered to meet these demanding requirements.

Built on Infineon’s advanced OptiMOS™ technology, this MOSFET is designed to deliver exceptional efficiency in switching applications. With an ultra-low on-state resistance (RDS(on)) of just 2.4 mΩ typical, the device minimizes conduction losses, which is paramount for improving system efficiency and reducing heat generation. This characteristic is especially beneficial in high-current applications such as DC-DC converters, synchronous rectification, and motor control circuits, where every milliohm counts.

Another significant advantage of the BSZ240N12NS3G is its outstanding switching performance. The low gate charge (Qg) and low reverse recovery charge (Qrr) ensure fast switching transitions, which directly reduces switching losses. This allows power converters to operate at higher frequencies without a substantial efficiency penalty, enabling the design of smaller, more compact magnetic components and filters. Consequently, system power density can be significantly increased.

Thermal management is a crucial factor in power design. The low RDS(on) of the BSZ240N12NS3G inherently leads to less power dissipation. Furthermore, the device offers a robust thermal performance due to its efficient package design. It is offered in a SuperSO8 package, which provides an excellent power-to-size ratio and improves heat dissipation from the die to the PCB. This enhances reliability and allows for higher continuous output currents in space-constrained applications.

The 120V voltage rating makes this MOSFET highly versatile and well-suited for a broad range of use cases. It is an ideal choice for 48V board net systems in mild-hybrid vehicles, telecom and server power supplies, and industrial power tools. Its ability to handle high load currents with minimal losses ensures that systems can operate cooler and more reliably, even under strenuous conditions.

ICGOOODFIND: The Infineon BSZ240N12NS3G is a superior power MOSFET that sets a high standard for efficiency and performance in modern power conversion systems. Its combination of ultra-low RDS(on), excellent switching characteristics, and strong thermal properties makes it an optimal solution for designers striving to achieve higher power density and superior energy efficiency in their applications.

Keywords:

Power Efficiency

OptiMOS™ Technology

Low RDS(on)

Synchronous Rectification

Thermal Performance

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