Nisi Semiconductor has launched the world's first production line for 35μm power semiconductor ultra-thin wafers in Shanghai Songjiang, marking a breakthrough in high-end power chip manufacturing.

Why 35μm Matters:

At just half the thickness of a human hair, sub-50μm wafers are extremely fragile and difficult to process. Nisi achieved ±1.5μm precision with grinding stress reduced by 92% through chemical etching. Fragment rate is below 0.1% .

Process Breakthroughs:

Custom laser cutting boosted yield to 98.5% with 11μm kerf width, increasing chip active area utilization by ~10%. Grinders hit 0.1μm precision , bonders process 400 wafers daily, and test lines handle 120,000 chips per day. Core equipment was jointly developed for process and tool autonomy.

Applications & Impact:

Thinner wafers reduce thermal resistance and extend power cycle life for EVs, 5G base stations, and fast charging. 20% more chips per wafer enable smaller phone chargers and lighter EV power units.

ICgoodFind : China just leapfrogged in ultra-thin wafer tech. 35μm precision unlocks next-gen power density for EVs and 5G—with domestic tools leading the way.